? semiconductor components industries, llc, 2011 november, 2011 ? rev. 7 1 publication order number: bcp68t1/d BCP68T1G, sBCP68T1G npn silicon epitaxial transistor this npn silicon epitaxial transistor is designed for use in low voltage, high current applications. the device is housed in the sot ? 223 package, which is designed for medium power surface mount applications. features ? high current: i c = 1.0 a ? the sot ? 223 package can be soldered using wave or reflow ? sot ? 223 package ensures level mounting, resulting in improved thermal conduction, and allows visual inspection of soldered joints. the formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die ? the pnp complement is bcp69t1 ? aec ? q101 qualified and ppap capable ? s prefix for automotive and other applications requiring unique site and control change requirements ? these devices are pb ? free, halogen free/bfr free and are rohs compliant* maximum ratings (t c = 25 ? c unless otherwise noted) rating symbol value unit collector ? emitter voltage v ceo 20 vdc collector ? base voltage v cbo 25 vdc emitter ? base voltage v ebo 5.0 vdc collector current i c 1.0 adc total power dissipation @ t a = 25 ? c (note 1) derate above 25 ? c p d 1.5 12 w mw/ ? c operating and storage temperature range t j , t stg ? 65 to 150 ? c thermal characteristics characteristic symbol max unit thermal resistance, junction ? to ? ambient (surface mounted) r ja 83.3 ? c/w lead temperature for soldering, 0.0625 in from case time in solder bath t l 260 10 ? c sec stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in. *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. medium power npn silicon high current transistor surface mount collector 2,4 base 1 emitter 3 http://onsemi.com device package shipping ? ordering information BCP68T1G sot ? 223 (pb ? free) ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d. marking diagram 1,000/tape & reel sot ? 223 case 318e style 1 ayw ca ca = specific device code a = assembly location y = year w = work week = pb ? free package (note: microdot may be in either location) bcp68t3g sot ? 223 (pb ? free) 4,000/tape & reel sBCP68T1G sot ? 223 (pb ? free) 1,000/tape & reel
BCP68T1G, sBCP68T1G http://onsemi.com 2 electrical characteristics (t a = 25 ? c unless otherwise noted) characteristics symbol min typ max unit off characteristics collector ? emitter breakdown voltage (i c = 100 adc, i e = 0) v (br)ces 25 ? ? vdc collector ? emitter breakdown voltage (i c = 1.0 madc, i b = 0) v (br)ceo 20 ? ? vdc emitter ? base breakdown voltage (i e = 10 adc, i c = 0) v (br)ebo 5.0 ? ? vdc collector ? base cutoff current (v cb = 25 vdc, i e = 0) i cbo ? ? 10 adc emitter ? base cutoff current (v eb = 5.0 vdc, i c = 0) i ebo ? ? 10 adc on characteristics dc current gain (i c = 5.0 madc, v ce = 10 vdc) (i c = 500 madc, v ce = 1.0 vdc) (i c = 1.0 adc, v ce = 1.0 vdc) h fe 50 85 60 ? ? ? ? 375 ? ? collector ? emitter saturation voltage (i c = 1.0 adc, i b = 100 madc) v ce(sat) ? ? 0.5 vdc base ? emitter on voltage (i c = 1.0 adc, v ce = 1.0 vdc) v be(on) ? ? 1.0 vdc dynamic characteristics current ? gain ? bandwidth product (i c = 10 madc, v ce = 5.0 vdc) f t ? 60 ? mhz typical electrical characteristics h fe , dc current gain 300 200 100 10 1000 100 10 1.0 i c , collector current (ma) figure 1. dc current gain t j = 125 ? c = 25 ? c = - 55 ? c v ce = 1.0 v f, current\gain\bandwidth product (mhz) t i c , collector current (ma) figure 2. current-gain-bandwidth product 300 200 100 70 50 30 1000 100 10 200 v ce = 10 v t j = 25 ? c f = 30 mhz
BCP68T1G, sBCP68T1G http://onsemi.com 3 typical electrical characteristics 1.0 1000 100 10 i c , collector current (ma) v, voltage (volts) figure 3. ?on? voltage 0.8 0.6 0.4 0.2 0 1.0 t j = 25 ? c v be(sat) @ i c /i b = 10 v be(on) @ v ce = 1.0 v v ce(sat) @ i c /i b = 10 c ib , capacitance (pf) 80 v r , reverse voltage (volts) figure 4. capacitance 0 70 60 50 40 30 1.0 2.0 3.0 4.0 t j = 25 ? c c ob , capacitance (pf) v r , reverse voltage (volts) figure 5. capacitance 0 5.0 10 15 20 t j = 25 ? c 25 20 15 10 5.0 1000 i c , collector current (ma) figure 6. base-emitter temperature coefficient -0.8 -1.2 -1.6 -2.0 -2.4 -2.8 100 10 1.0 v ce , collector voltage (v) 1.0 0.8 0.6 0.4 0.2 0 100 i b , base current (ma) 10 1.0 0.1 0.01 t j = 25 ? c i c = 10 ma = 100 ma = 500 ma 5.0 r vb , temperature coefficient (mv/ c) ? ? r vb for v be = 50 ma figure 7. saturation region = 1000 ma
BCP68T1G, sBCP68T1G http://onsemi.com 4 package dimensions sot ? 223 (to ? 261) case 318e ? 04 issue n style 1: pin 1. base 2. collector 3. emitter 4. collector a1 b1 d e b e e1 4 123 0.08 (0003) a l1 c notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: inch. 1.5 0.059 mm inches scale 6:1 3.8 0.15 2.0 0.079 6.3 0.248 2.3 0.091 2.3 0.091 2.0 0.079 soldering footprint* h e dim a min nom max min millimeters 1.50 1.63 1.75 0.060 inches a1 0.02 0.06 0.10 0.001 b 0.60 0.75 0.89 0.024 b1 2.90 3.06 3.20 0.115 c 0.24 0.29 0.35 0.009 d 6.30 6.50 6.70 0.249 e 3.30 3.50 3.70 0.130 e 2.20 2.30 2.40 0.087 0.85 0.94 1.05 0.033 0.064 0.068 0.002 0.004 0.030 0.035 0.121 0.126 0.012 0.014 0.256 0.263 0.138 0.145 0.091 0.094 0.037 0.041 nom max l1 1.50 1.75 2.00 0.060 6.70 7.00 7.30 0.264 0.069 0.078 0.276 0.287 h e ? ? e1 0 ? 1 0 ? 0 ? 1 0 ? l l 0.20 ??? ??? 0.008 ??? ??? *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 bcp68t1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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